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Silicon Carbide Semiconductor Device And Manufacture Thereof

A silicon carbide semiconductor device and method of manufacture thereof is made by providing a channel control zone which has impurity concentration A

on the combined effects of titania and silicon carbide on

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phosphorous oxides systems supported on silicon carbide

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combinatorial metamaterial based on silicon carbide/carbon

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on the combined effects of Titania and Silicon carbide on

Silicon carbide on the Phase Developments and made it to have the highest cold crushing inorganic or any metal which will give the

EP0133343A1 - Granular silicon carbide abrasive grain coated

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Advances in Silicon Carbide Processing and Applications_

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COMPOSITIONS AND METHODS USING SAME FOR DEPOSITION OF SILICON

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride,

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Silicon carbide - Wikipedia

Grains of silicon carbide can be bonded together by sintering to form verymade today and formed the Carborundum Com

Silicon carbide and manufacture thereof

2011719-This invention relates to the manufacture of silicon carbide, and to a product produced by the interaction of sand and carbon under conditio

S.V. Kazakovs research works in Chemistry and Physics

S.V. Kazakovs 2 research works with including: Optimization of composition and plastic material properties for silicon carbide products manufacture. and

- Method of preparing extruded grains of silicon carbide -

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- CERATEK/Alumina Ceramic Lining Tile/Wear Resistant Lining/

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US Patent Application for Stop-On Silicon Containing Layer

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STPSC20H12C - 1200 V, 20 A High surge Silicon Carbide Power

bodies, and methods for making same - Google and a silicon carbide matrix produced by the Specific articles of manufacture contemplated include

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GE makes $200M investment in silicon carbide manufacturing

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Pack cemented silicon carbide interlayer for plasma sprayed

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