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Physical Properties of Silicon CarbideTsunenobu Kimoto Kyoto University, JapanSearch for more papers by this author James A. Cooper Purdue

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US Patent for Silicon carbide substrate Patent (Patent # 10,

A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear

107992-37-0_Silicon carbideCAS:107992-37-0/Silicon carbide

Comparing microwave-heated reactions in glass and silicon carbide vials suggests that heating effects alone are responsible for the benefits of

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